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BUK9107-40ATC
TrenchPLUS logic level FET
Rev. 03 -- 22 January 2002
M3D322
Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability: BUK9107-40ATC in SOT426 (D2-PAK).
2. Features
s s s s Typical on-state resistance 5.8 m Q101 compliant ESD and overvoltage protection Monolithically integrated temperature sensor for overload protection.
3. Applications
s Automotive and power switching: x 12 V and 24 V high power motor drives (e.g. Electrical Power Assisted Steering (EPAS)) x Protected drive for lamps.
4. Pinning information
Table 1: Pin 1 2 3 4 5 mb Pinning - SOT426, simplified outline and symbol Simplified outline Symbol
d mb a
Description gate (g) anode (a) drain (d) cathode (k) source (s) mounting base; connected to drain (d)
g 12345
MBL306
s
k
Front view
MBK127
SOT426 (D2-PAK)
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
5. Quick reference data
Table 2: Quick reference data Conditions Tj = 25 C; IGS(CL) = -2 mA; ID = 1 A Tmb = 25 C; VGS = 5 V Tmb = 25 C Tj = 25 C; VGS = 5 V; ID = 50 A Tj = 25 C; VGS = 4.5 V; ID = 50 A Tj = 25 C; VGS = 10 V; ID = 50 A VF SF temperature sense diode forward voltage temperature sense diode temperature coefficient Tj = 25 C; IF = 250 A -55 C < Tj < +175 C; IF = 250 A Typ 50 5.8 6 5.2 658 -1.54 Max 140 272 175 7 7.7 6.2 668 -1.68 Unit V A W C m m m mV mV/K Symbol Parameter VDSR(CL) drain-source clamping voltage ID Ptot Tj RDSon drain current (DC) total power dissipation junction temperature drain-source on-state resistance
9397 750 08724
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
2 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGS VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 IDM Ptot IDG(CL) IGS(CL) peak drain current total power dissipation drain-gate clamping current gate-source clamping current Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 tp = 5 ms; = 0.01 continuous tp = 5 ms; = 0.01 Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj IDR IDRM Clamping EDS(CL)S non-repetitive drain-source clamping energy unclamped inductive load; ID = 75 A; VDS 40 V; VGS = 5 V; RGS = 10 k; starting Tj = 25 C Human Body Model; C = 100 pF; R = 1.5 k 1.4 J storage temperature junction temperature reverse drain current (DC) pulsed reverse drain current Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s
[2] [3]
Conditions
[1]
Min -55 -55 [1] [1] [2] [3] [3]
Max 40 40 15 140 75 75 560 272 50 10 50 100 +175 +175 140 75 560
Unit V V V A A A A W mA mA mA V C C A A A
IDG = 250 A
Source-drain diode
Electrostatic discharge Vesd electrostatic discharge voltage; pins 1, 3, 5 6 kV
[1] [2] [3]
Voltage is limited by clamping Current is limited by power dissipation chip rating Continuous current is limited by package.
9397 750 08724
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
3 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
120 Pder
(%) 100
03na19
150 ID (A) 125
03ne74
80
100
60
75 Capped at 75 A due to package
40
50
20
25
0 0 25 50 75 100 125 150 175 200
Tmb (C)
0 25 50 75 100 125 150 175 200 Tmb (oC)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 5 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
103 ID (A)
03ne75
RDSon = VDS/ID
tp = 10 s
102
100 s
Capped at 75 A due to package DC 10
1 ms
10 ms 100 ms
1 1 10 VDS (V) 102
Tmb = 25 C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08724
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
4 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
7. Thermal characteristics
Table 4: Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting base Conditions mounted on printed circuit board; minimum footprint; SOT426 package Figure 4 Min Typ Max 50 0.55 Unit K/W K/W
7.1 Transient thermal impedance
1
Z th(j-mb) (K/W)
03ne76
= 0.5
10-1
0.2 0.1 0.05
P
10-2
0.02
=
tp T
Single Shot
tp T
t
10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 08724
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
5 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DG Parameter drain-gate zener breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 40 V; VGS = 0 V Tj = 25 C Tj = 175 C V(BR)GSS IGSS RDSon gate-source breakdown voltage gate-source leakage current drain-source on-state resistance IG = 1 mA; -55 C < Tj < 175 C VGS = 5 V; VDS = 0 V VGS = 5 V; ID = 50 A; Figure 7 and 8 Tj = 25 C Tj = 175 C VGS = 4.5 V; ID = 50 A VGS = 10 V; ID = 50 A VF SF temperature sense diode forward voltage temperature sense diode temperature coefficient temperature sense diode forward voltage hysteresis input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time internal drain inductance measured from upper edge of drain mounting base to centre of die VDD = 30 V; RL = 1.2 ; VGS = 5 V; RG = 1 k IF = 250 A IF = 250 A; -55 C < Tj < 175 C 125 A < IF < 250 A 648 -1.4 5.8 6 5.2 658 -1.54 7 14 7.7 6.2 668 -1.68 m m m m mV mV/K 12 0.1 15 5 100 250 1000 A A V nA 1 0.5 1.5 2 2.3 V V V 40 40 V V Min Typ Max Unit Static characteristics
Vhys
25
32
50
mV
Dynamic characteristics Ciss Coss Crss td(on) tr td(off) tf Ld VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 5836 958 595 3 10 17 11 2.5 pF pF pF s s s s nH
9397 750 08724
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
6 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
Table 5: Characteristics...continued Tj = 25 C unless otherwise specified. Symbol Ls Parameter internal source inductance Conditions measured from source lead to source bond pad IS = 25 A; VGS = 0 V; Figure 19 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V Min Typ 7.5 Max Unit nH
Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge 0.85 85 250 1.2 V ns nC
9397 750 08724
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
7 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
ID 400 (A) 350 300
03ne77
V GS = 5 V 6 10
4.6 4.4 4.2
4
25 RDSon (m) 20
03ne79
250 200 150 100 50 0 0 2 4 6 8 10 VDS (V)
3.8
3.6
15
3.4
3.2
10
3
2.8
5
2.6 2.4 2.2
0 2 4 6 8V 10 GS (V)
Tj = 25 C; tp = 300 s
Tj = 25 C; ID = 50 A
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values.
16 RDSon (m) 14 VGS = 3 V 3.6 3.2 3.4
03ne78
2 a
03ne89
3.8
4
1.5
12
1
10
8
5 10
0.5
6 0 50 100 150 200 250 300 ID (A)
0 -60 0 60 120 Tj (C) 180
Tj = 25 C; tp = 300s
R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
9397 750 08724
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
8 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
2.5 VGS(th)
(V) 2 max
03na17
10-1 ID
(A) 10-2
03na18
typ
1.5
min
10-3
min
typ
max
1
10-4
0.5
10-5
0 -60 -20 20 60 100 140 180 Tj (oC)
10-6
0 0.5 1 1.5 2 2.5 3 V (V) GS
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
140 gfs (S) 120 100 80 60
03ne81
16000 C (pF) 14000 12000 10000 8000 6000
03ne86
Ciss
40
4000
20 0 0 20 40 60 80 I (A) 100 D
2000 0 10-2 10-1 1 10 VDS (V) Coss Crss 102
Tj = 25 C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 08724
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
9 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
100 ID (A) 80
03ne80
5 V GS (V) 4 V DS = 14 V
03ne87
60
3
Tj = 175 C
40
2
V DS = 35 V
20
1
Tj = 25 C
0 0.0 1.0 2.0 VGS (V) 3.0
0 0 20 40 60 80 100 120 QG(nC)
VDS = 25 V
Tj = 25 C; ID = 50 A
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values.
51 V DSR(CL) (V) 50.5 Tj = 175 C
03ne82
54 V DSR(CL) (V) 52 Tj = 175 C 50 Tj = 25 C
03ne83
Tj = -55 C
50 Tj = 25 C 49.5 Tj = -55 C
48 46 44
49
42
48.5 0 2 4 6 8 ID (A) 10
40 0 1 2 -IGS(CL) (mA) 3
IGS(CL) = -2 mA
ID = 10 A
Fig 15. Drain-source clamping voltage as a function of drain current; typical values.
Fig 16. Drain-source clamping voltage as a function of gate current; typical values.
9397 750 08724
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
10 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
700 VF (mV)
03ne84
1.70 -SF (mV/K) 1.65
03ne85
max
600
1.60
typ
1.55
500
1.50
1.45
min
400 0 50 100 150 Tj (C) 200
1.40 645 650 655 660 665 670 675 VF (mV)
IF = 250 A
VF at Tj = 25 C; IF = 250 A
Fig 17. Forward voltage of temperature sense diode as a function of junction temperature; typical values.
Fig 18. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values.
100 IS (A) 80 Tj = 175 C 60
03ne88
40 Tj = 25 C 20
0 0.0 0.5 1.0 VSD (V) 1.5
VGS = 0 V
Fig 19. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 08724
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
11 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
9. Package outline
Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped) SOT426
A E A1
D1 mounting base
D
HD
3 1
Lp
2
4
5
b
c Q
e
e
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.70 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT426
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 98-12-14 99-06-25
Fig 20. SOT426.
9397 750 08724 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
12 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
10. Soldering
handbook, full pagewidth
10.85 10.60 10.50 1.50 7.50 7.40 1.70
2.25 2.15
8.15
8.35
8.275 1.50
4.60
0.30 4.85
5.40 8.075
7.95
3.00
0.20
solder lands solder resist occupied area solder paste
1.70 (2x)
3.40 8.15
0.90 1.00
MSD058
Dimensions in mm.
Fig 21. Reflow soldering footprint for SOT426.
9397 750 08724
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
13 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
11. Revision history
Table 6: Rev Date 03 02 20020122 20010829 Revision history CPCN Description Product data; third version (9397 750 08724); supersedes second version of 20010829 Product data; second version (9397 750 08709); supersedes initial version of 20010814
* * *
01 20010814 -
Units of symbol `RDSon' changed from `' to `m' in Table 2 Units of timing parameters changed from `ns' to `s' in Table 5 Values of timing parameters changed in Table 5
Product data; initial version (9397 750 08319)
9397 750 08724
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
14 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
12. Data sheet status
Data sheet status[1] Objective data Preliminary data Product status[2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Product data
Production
[1] [2]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
13. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
14. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
15. Trademarks
TrenchMOS -- is a registered trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 08724
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 03 -- 22 January 2002
15 of 16
Philips Semiconductors
BUK9107-40ATC
TrenchPLUS logic level FET
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Transient thermal impedance . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
(c) Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 January 2002 Document order number: 9397 750 08724

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